Publikationer

Innehåll:

Articles in international scientic journals

 (Total Citations: 1600, H-index: 21. Citation data from Google Scholar, October 30th 2018)

127. Qing Cao, Shu-Jen Han, Jerry Tersoff, Aaron D. Franklin, Yu Zhu, Zhen Zhang, George S. Tulevski, Jianshi Tang, and Wilfried Haensch, “End-Bonded Mo2C Contacts for Carbon Nanotube Transistors with Low, Size-Independent Resistance”, Science, Vol 350, Issue 6256, pp.68-72 (2015). (No. of citations: 105)

IEEE Journals

126. Malkolm Hinnemo, Asta Makaraviciute, Patrik Ahlberg, Jörgen Olsson, Zhen Zhang, Shi-Li Zhang, and Zhibin Zhang, ‘Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors’, IEEE SENSORS JOURNAL, VOL. 18, NO. 16,  pp.6497-6503 (2018).

125. Fei Liu, Zhen Zhang, Marwan H. Khater, Yu Zhu, Siyuranga O. Koswatta, Josephine Chang, Jemima Gonsalves, William Price, Sebastian U. Engelmann, Michael A. Guillorn, “Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy”, IEEE Electron Device Letters, 35, pp. 512-514 (2014). (No. of citations: 1)

124. Zhen Zhang, S. Koswatt, S. Bedell, A. Baraskar, M. Guillorn, S. Engelmann, Y. Zhu, J. Gonsalves, A. Pyzyna, M. Hopstaken, C. Witt, L. Yang, F. Liu, J. Newbury, Wei Song, C. Cabral, M. Lofaro, A. Ozcan, M. Raymond, C. Lavoie, J. Sleight, K. Rodbell, P. Solomon, “Ultra low contact resistivities for CMOS beyond 10nm node”, IEEE Electron Device Letters. 34, pp.723-725 (2013) (No. of citations: 22)

123. Zhen Zhang, J. Atkin, M. Hopstaken, M. Hatzistergos, P. Ronsheim, E. Liniger, R. Laibowitz, P. Solomon, “Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission”, IEEE transaction on Electron Devices, 59, 2027 (2012). (No. of citations: 4)

122. Z. Zhang, F. Pagette, C. D'Emic, B. Yang, C. Lavoie, A. Ray, Y. Zhu, M. Hopstaken, S. Maurer, C. Murray, M. Guillorn, D. Klaus, J. Bucchignano, J. Bruley, J. Ott, A. Pyzyna, J. Newbury,W. Song, G. Zuo, K.-L. Lee, A. Ozcan, J. Silverman, Q. Ouyang, D-G. Park, W. Haensch, P. M. Solomon, “Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering with Silicides as Diffusion Sources”, IEEE Electron Device Letters, 31, pp. 731-733 (2010) (No. of citations: 121)

121. M. Khater, Z. Zhang (Contact author), J. Cai, C. Lavoie, C. d‘Emic, B. Yang†, Q. Yang, M. Guillorn, D. Klaus, J. Ott, Y. Zhu, Y. Zhang, C. Choi, M. Frank, K-L. Lee, V. Narayanan, D.-G. Park, Q. Ouyang, and W. Haensch, “High-κ/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length”, IEEE Electron Device Letters, 31, pp. 275-277 (2010). (No. of citations: 95)

120. Z. Zhang, J. Lu, Z. Qiu, P.-E. Hellström, M. Östling, and S.-L. Zhang, “Performance fluctuation of FinFETs with Schottky barrier source/drain”, IEEE Electron Device Letters, 29, 506 (2008). (No. of citations: 23)

119. Z. Zhang, Z. Qiu, P.-E. Hellström, G. Malm, J. Olsson, J. Lu, M. Östling, and S.-L. Zhang, “SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation”, IEEE Electron Device Letters, 29, 125(2008) (No. of citations: 42)

118. Z. Qiu, Z. Zhang, M. Östling, and S.-L. Zhang, “A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering”, IEEE Transactions on Electron Devices, 55, 396(2008) (No. of citations: 161) (Contact author)

117. Z. Zhang, Z. Qiu, R. Liu, M. Östling, and S.-L. Zhang, “Schottky barrier height tuning by means of ion implantation into pre-formed silicide films followed by drive-in anneal”, IEEE Electron Device Letters, 28, 565 (2007). (No. of citations: 105)

AIP Journals

116. L. Jablonka, T. Kubart, F. Gustavsson, M. Descoins, D. Mangelinck, S.-L. Zhang, and Z. Zhang, "Improving the morphological stability of nickel germanide by tantalum and tungsten additions", Appl. Phys. Lett., 112, 103102 (2018).

115. L. Jablonka, L. Riekehr, Z. Zhang, S.-L. Zhang, and T. Kubart, "Highly conductive ultrathin Co films by high-power impulse magnetron sputtering", Appl. Phys. Lett., 112, 043103 (2018). (No. of citation: 4)

114. Da Zhang, Indrek Must, Nathan L. Netzer, Xingxing Xu, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, “Direct assessment of solid–liquid interface noise in ion sensing using a differential method”, Appl. Phys. Lett., 108, 151603 (2016) (No. of citations: 6)

113. Da Zhang, Xindong Gao, Si Chen, Hans Norström, Ulf Smith, Paul Solomon, Shi-Li Zhang, Zhen Zhang, “An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance”, Appl. Phys. Lett., 105, 082102 (2014) (No. of citations: 6)

112. Zhen Zhang, Bin Yang, Yu Zhu, Simon Gaudet, Steve Rossnagel, Andrew J. Kellock, Ahmet Ozcan, Conal Murray, Patrick Desjardins, Shi-Li Zhang, Jean Jordan-Sweet, and Christian Lavoie “Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films” Appl. Phys. Lett., 97, 252108 (2010) (No. of citations: 23)

111. Zhen Zhang, Shi-Li Zhang, Bin Yang, Yu Zhu, Stephen M. Rossnagel, Simon Gaudet, Andrew J. Kellock, Jean Jordan-Sweet, and Christian Lavoie, “Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate”, Appl. Phys. Lett., 96, 071915 (2010) (No. of citations: 51)

110. Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Åkerman, Mikael Östling, Lars Hultman, and Shi-Li Zhang, “Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films”, Appl. Phys. Lett., 96, 031911 (2010) (No. of citations: 47)

109. Conal E. Murray, Zhen Zhang, Christian Lavoie and Jean L. Jordan-Sweet, “Stress determination in nickel monosilicide films using x-ray diffraction”, J. Appl. Phys., 106, 073521 (2009) (No. of citations: 9)

108. Z. Zhang, S.-L. Zhang, M. Östling, and J. Lu, “Robust, scalable self-aligned platinum silicide process”, Appl. Phys. Lett., 88, 142114 (2006). (No. of citations: 21)

107. Z. Zhang, J. Lu, P.-E. Hellström, M. Östling, and S.-L. Zhang, “Ni2Si nanowires of extraordinarily low resistivity”, Appl. Phys. Lett., 88, 213103 (2006). (No. of citations: 18)

106. Z. Zhang, P.-E. Hellström, M. Östling, S.-L. Zhang, and J. Lu, “Electrically robust ultralong nanowires of NiSi, Ni2Si and Ni31Si12”, Appl. Phys. Lett., 88, 043104 (2006). (No. of citations:  24)

Other journals

105. Xingxing Xu, Asta Makaraviciutea, Jean Pettersson,  Shi-Li Zhang, Leif Nyholm,  and Zhen Zhang, ‘Revisiting the Factors Influencing Gold Electrodes Prepared Using Cyclic Voltammetry’, Sensors and Actuators B: Chemical (2018),  DOI: 10.1016/j.snb.2018.12.008

104. Chenyu Wen, S. Zeng, Zhen Zhang and Shi-Li Zhang, "Group behavior of nanoparticles translocating multiple nanopores",  Anal. Chem., DOI: 10.1021/acs.analchem.8b03408 .

103. S. Li, S. Zeng, L. Chen, Z. Zhang, K. Hjort, and S.-L. Zhang, “Nanoarrays on Passivated Aluminum Surface for Site-Specific Immobilization of Biomolecules,” ACS Applied Bio Materials, Jun. 2018, DOI: 10.1021/acsabm.8b00037 .

102. Jiyue Wu, Amit Mahajan, Lars Riekehr, Hangfeng Zhang, Bin Yang, Nan Meng, Zhen Zhang and Haixue Yan, Perovskite Srx(Bi1-xNa0.97-xLi0.03)0.5TiO3 ceramics with polar nano regions for high power energy storage, Nano Energy, DOI: 10.1016/j.nanoen.2018.06.016 . (No. of citation:  5)

101. X. Chen, Q. Hu, S. Chen, N.L. Netzer, Z. Wang, S.-L. Zhang, and Z. Zhang, “Multiplexed Analysis of Molecular and Elemental Ions Using Nanowire Transistor Sensors”, Sensors and Actuators B: Chemical 270, 89 (2018).

100.  Chenyu Wen, Zhen Zhang , Shi-Li Zhang,  Physical Model for Rapid and Accurate Determination of Nanopore Size via Conductance Measurement, ACS Sensors, 2, 1523 (2017), DOI: 10.1021/acssensors.7b00576 (No. of citation:  1)

99. Asta Makaraviciute, Xingxing Xu, Leif Nyholm, and Zhen Zhang, ‘Systematic Approach to the Development of Microfabricated Biosensors: Relationship between Gold Surface Pretreatment and Thiolated Molecule Binding’ ACS Applied Materials and Interfaces (2017) DOI: 10.1021/acsami.7b08581

98. Da Zhang,  Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘Correlation of Low-Frequency Noise to the Dynamic Properties of the Sensing Surface in Electrolytes’ ACS Sensors (2017) DOI:10.1021/acssensors.7b00285

97. Da Zhang,  Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘An impedance model for the low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface’, Sensors and Actuators B: Chemical (2017) DOI:10.1016/j.snb.2017.07.054. (No. of citation:  2)

96. Nathan L. Netzer, Indrek Must, Yupu Qiao, Shi-Li Zhang,  Zhenqiang Wang,  and Zhen Zhang, “Biomimetic supercontainers for size-selective electrochemical sensing of molecular ions”,  Nature: scientific reports  | 7:45786 (2017) | DOI: 10.1038/srep45786 (No. of citation:  2)

95. Chenyu Wen, Shuangshuang Zeng, Kai Arstila, Timo Sajavaara, Yu Zhu, Zhen Zhang, and Shi-Li Zhang, ‘Generalized Noise Study of Solid-State Nanopores at Low 2 Frequencies’, ACS Sensors, ACS Sensors 2, 300 (2017). (No. of citation:  5)

94. L. Jablonka, T. Kubart, D. Primetzhofer, A. Abedin, P.-E. Hellström, M. Östling, J. Jordan-Sweet, C. Lavoie, S.-L. Zhang, and Z. Zhang, “Formation of nickel germanides with Ni layers below 10 nm in thickness”,  J. Vac. Sci. Technol. B, 35, 020602-1 (2017) (No. of citation:  2)

93.   Xi Chen, Tao Zhang, Vassilios Constantoudis, Shi-Li Zhang, and Zhen Zhang, “Aged Hydrogen Silsesquioxane for Sub-10 nm Line Patterns”, Microelectron. Eng., 163, 105 (2016) (No. of citations: 1)

92. Chenyu Wen, Shuangshuang Zeng, Zhen Zhang, Klas Hjort, Ralph Scheicher and Shi-Li Zhang, “On nanopore DNA sequencing by signal and noise analysis of ionic current”, Nanotechnology, 27 (2016) 215502. (No. of citations: 7)

91. Xindong Gao, Joakim Andersson, Tomas Kubart, Tomas Nyberg, Ulf Smith, Jun Lu, Lars Hultman, Andrew J. Kellock, Zhen Zhang, Christian Lavoie, and Shi-Li Zhang, “Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness”, Electrochemical and Solid-State Letters, 14, H268-H270 (2011) (No. of citations: 17)

90. Jun Luo, Zhijun Qiu, Zhen Zhang, Mikael Ostling, Shi-Li Zhang, “Interaction of NiSi with dopants for metallic source/drain applications”, J. Vac. Sci. Technol. B, 28, 1071 (2010). (No. of citations: 38)

89. J. Hållstedt, P.-E. Hellström, Z. Zhang(Equal contribution as the 1st author), G. Malm, J. Edholm, J. Lu, S.-L. Zhang, H. H. Radamson, and M. Östling, “A robust spacer gate process for deca-nanometer high-frequency MOSFETs”, Microelectron. Eng., 83, 434 (2006). (No. of citations: 37) 

88. Z. Zhang, P.-E. Hellström, J. Lu, M. Östling, and S.-L. Zhang, “A novel, self-aligned process for platinum silicide nanowires”, Microelectron. Eng., 83, 2107 (2006). (No. of citations: 18)

87. Haixue Yan; Hongtao Zhang; Zhen Zhang; Ubic, R, Reece, M.J., “B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics”, Journal of the European Ceramic Society, 26, 2785 (2006). (No. of citations: 78)

86. Haixue Yan; Hongtao Zhang ; Ubic Rick ; Reece Michael J.; Jing Liu; Zhijian Shen; Zhen Zhang, “A lead-free high-curie-point ferroelectric ceramic, CaBi2Nb2O9”, Advanced Materials, 17, 1261 (2005). (No. of citations: 242)

85. Haixue Yan, Zhen Zhang; Weimin Zhu; Lianxin He; Youhua Yu; Chengen Li; Jiaguang Zhou, “The effect of (Li,Ce) and (K,Ce) doping in Aurivillius phase material CaBi4Ti4O15”, Materials Research Bulletin, 39, 1237 (2004). (No. of citations: 74)

84. Zhen Zhang, Haixue Yan; Pinghua Xiang; Xianlin Dong; Yongling Wang, “Grain orientation effects on the properties of a bismuth layer-structured ferroelectric (BLSF) Bi3NbTiO9 solid solution”, Journal of the American Ceramic Society, 87, 602 (2004). (No. of citations: 51)

83. Zhen Zhang, Haixue Yan; Xianlin Dong; Yongling Wang, “Preparation and electrical properties of bismuth layer-structured ceramic Bi3NbTiO9 solid solution” Materials Research Bulletin, 38, 241 (2003). (No. of citations: 61)

Contributions to scientific conferences

82. Shuangshuang Zeng, Chenyu Wen, Shi-Li Zhang, Zhen Zhang, ‘Single molecule detection via solid state carbon nanopore’,  9th Euro Biosensors & Bioelectronics Congress, November 29-30, 2018 at Dublin, Ireland

81. Qitao Hu, Xi Chen, Hans Norström, Shuangshuang Zeng, Yifei Liu, Fredrik Gustavsson, Shi-Li Zhang, Si Chen, and Zhen Zhang, ‘Current gain and low-frequency noise of symmetric lateral bipolar junction transistors on SOI’, 48th European Solid-State Device Research Conference (ESSDERC), September 3 - 6, 2018, DRESDEN, Germany

80. Xingxing Xu, Asta Makaraviciute, Jean Pettersson, Shili Zhang, Leif Nyholm, Zhen Zhang, "Considerations in the Cyclic Voltammetry of Gold in Sulfuric Acid Solutions and its Relation to the Experimental Configuration", 69th Annual Meeting of the International Society of Electrochemistry, September 2nd to 7,  Bologna, Italy

79. Da Zhang, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘Low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface of ion sensors’ China Semiconductor Technology International Conference (CSTIC), March 12th, 2018, Shanghai, China. (Invited talk)

78. A. Makaraviciute, X. Xu, S.L. Zhang, L. Nyholm, Z. Zhang, ‘Impact of different pre-treatment methods on the cleanliness and functionalization of microfabricated gold surfaces aimed at biosensor applications’, 5th International Conference on Bio-Sensing Technology, Riva del Garda (on Lake Garda), Italy, May 2017

77. Xi Chen, Qitao Hu, Si Chen, Nathan L. Netzer, Zhenqiang Wang, Shi-Li Zhang, and Zhen Zhang, ‘Multi-target detections using a silicon nanowire ISFET array’ , 5th International Conference on Bio-Sensing Technology, Riva del Garda (on Lake Garda), Italy, May 2017

76. T. Kubart, L. Jablonka, Z. Zhang, S.L. Zhang, "Electrical conductivity of thin cobalt films deposited by HiPIMS", Fifteenth International Conference on Reactive Sputter Deposition 2016, Ghent, Belgium, Dec 2016.

75. Lukas Jablonka, Ahmad Abedin, Per-Erik Hellström, Mikael Östling, Shi-Li Zhang, Zhen Zhang, Jean L.  Jordan Sweet, Christian Lavoie, "Scalability study of nickel germanides", Materials for Advanced Metalization conference, Brussels, Belgium, March 2016.

74. T. Kubart, L. Jablonka, Z. Zhang, S.L. Zhang, "Metallization of nanostructures by High Power Impulse Magnetron Sputtering" MIATEC 2015 (4th Magnetron, Ion processing & Arc Technologies European Conference), Paris, France, December 11-15 2015.

73. Zhen Zhang, “Ion sensing using An Ion-gated Bipolar Amplifier”, China Semiconductor Technology International Conference (CSTIC), March 15th, 2015, Shanghai, China. (Invited talk)

72. Zhen Zhang, “Advanced contact technology for extremely scaled device applications”, China Semiconductor Technology International Conference (CSTIC), March 16-17th, 2014, Shanghai, China. (Invited talk)

71. Zhen Zhang, “Schottky barrier engineering”, ULIS conference, April 7-9th, 2014, Stockholm, Sweden. (Invited talk)

70. Zhen Zhang, “Advanced contact technology: from material properties to device applications”, 16th Euro. Workshop on Materials for Advanced Metallization, Grenoble, March 2012. (Invited talk)

69. Fei Liu, Benjamin Fletcher, Eric Joseph, Yu Zhu, Jemima Gonsalves, William Price, Gregory M. Fritz, Sebastian U. Engelmann, Adam Pyzyna, Zhen Zhang, Cyril Cabral, Jr, Michael A Guillorn, “Subtractive W Contact and Local Interconnect Co-integration (CLIC)”, IEEE International interconnect technology conference, Kyoto, Japan, June-2013. (No. of citations: 6)

68. Gregory Fritz*, Adam Pyzyna, Zhen Zhang, Fei Liu, Michael Guillorn, Kenneth Rodbell, Robert Wisnieff, “Interconnect Material Choices for Future Scaled Devices”, Advanced Metallization Conference, Albany, NY, 2012

67. Mark Raymond, Bin Yang, Zhen Zhang, Ahmet Ozcan and Christian Lavoie, “Silicide Contact Resistivity and Phase Formation for Extremely Scaled CMOS Device Applications”, Materials Research Society (MRS) 2012 Spring meeting, San Francisco.

66. K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, B. Haran, A. Kumar, T. Adam, A. Reznicek, N. Loubet, H. He, J. Kuss, M. Wang, T. M. Levin, F. Monsieur, Q. Liu, R. Sreenivasan, J. Cai, A. Kimball, S. Mehta, S. Luning, Y. Zhu, Z. Zhu, T. Yamamoto, A. Bryant, C. –H. Lin, S. Naczas, H. Jagannathan, L. F. Edge, S. Allegret-Maret, A. Dube, S. Kanakasabapathy, S. Schmitz, A. Inada, S. Seo, M. Raymond, Z. Zhang, A. Yagishita, J. Demarest, J. Li, M. Hopstaken, N. Berliner, A. Upham, R. Johnson, S. Holmes, T. Standaert, M. Smalley, N. Zamdmer, Z. Ren, T. Wu, H. Bu, V. Paruchuri, D. Sadana, V. Narayanan, W. Haensch, J. O'Neill, T. Hook, M. Khare, B. Doris, “ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08µm2 RAM Cell”, IEEE VLSI Symposium 2011, pp. 128-129. (No. of citations: 38)

65. M.A. Guillorn, J. Chang, A. Pyzyna, S. Engelmann, M. Glodde, E. Joseph, R. Bruce, J.A. Ott, A. Majumdar, F. Liu, M. Brink, S. Bangsaruntip, M. Khater, S. Mauer, I. Lauer, E.A. Duch, C. Lavoie, Z. Zhang, J. Newbury, E. Kratschmer, D.P. Klaus, J. Bucchignano, B. To, W. Graham, E. Sikorski, V. Narayanan, N. Fuller and W. Haensch, “A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch”, IEEE VLSI Symposium 2011, pp. 64-65. (Late news paper) (No. of citations: 8)

64. Zhen Zhang, F. Pagette, C. D'Emic, B. Yang, C. Lavoie, A. Ray, Y. Zhu, M. Hopstaken, S. Maurer, C. Murray, M. Guillorn, D. Klaus, J. J. Bucchignano, J. Bruley, J. Ott, A. Pyzyna, J. Newbury,W. Song, G. Zuo, K.-L. Lee, A. Ozcan, J. Silverman, Q. Ouyang, D-G. Park, W. Haensch, P. M. Solomon, “Effective Schottky Barrier Lowering for Contact Resistivity Reduction Using Silicides as Diffusion Sources”, Proc. International Symposium on VLSI Technology, System and Applications (VLSI-TSA) 2010.

63. Bin Yang, Yu Zhu, Zhen Zhang, Mark Raymond, Jean Jordan-Sweet, Christian Lavoie, Shankar_Muthukrishnan, Abhilash Mayur, Ben NG, Simon Gaude, “(Ni,Pt)Si morphological study with post-silicide laser annealing”, Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009,

62. Bin Yang, Zhen Zhang, Simon Gaudet, Ahmet S Ozcan, Jean Jordan-Sweet, Andrew Kellock, Patrick Desjardins, and Christian Lavoie, “(Ni, Pt)Si Formation, Texture, and Morphological Stability with High Pt Alloy Concentration” Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009.

61. Zhen Zhang, Bin Yang, Simon Gaudet, Steve Rossnagel, Andrew J. Kellock, Yu Zhu, Ahmet Ozcan, Conal Murray, Patrick Desjardins, Jean Jordan-Sweet, Christian Lavoie, “Ultra-thin Ni-based silicides formed from Metal-Si intermixed layer”, Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009.

60. M. Östling, V. Gudmundsson, P-E. Hellström, B.G. Malm, Z. Zhang, S.-L. Zhang, “Towards Schottky barrier source/drian MOSFETs”, Invited talk at 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2008), eds. R. Huang, 2008, pp. 146-149.

59. Z.J. Qiu, Z. Zhang, J. Olsson, J. Lu, P.-E. Hellström, R. Liu, M. Östling, S.-L. Zhang, “Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI”, Proc. ULIS 2008, pp. 175-178.

58. Z.J. Qiu, Z. Zhang, J. Lu, R. Liu, M. Östling, S.-L. Zhang, “Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI”, Proc. ULIS 2008, pp. 23-26. (No. of citations: 4)

57. Mikael Östling, B. Gunnar Malm, Martin von Haartman, Julius Hållstedt, Zhen Zhang, Per-Erik Hellström and Shili Zhang, “Challenges for 10 nm MOSFET process integration”, Invited talk at 7th IEEE symposium D&Y Advance Silicon Devices and Technology for ULSI Era, published in Journal of Telecommunications and Information Technology, V.2, 25(2007) (No. of citations: 5)

Book chapters

56. Shi-Li Zhang and Zhen Zhang, “Metal Silicides in Advanced CMOS Technology” Chapter 7 for book “Metallic films: structure, processing and properties” edited by Katayun Barmak (Carnegie Mellon University) and Kevin Coffey (University of Central Florida), Woodhead Publishing Ltd, UK, December-2013

Filed/Issued Patents

(Listed with IBM patent docket number)

55. YOR920090602US1: SOI SCHOTTKY SOURCE/DRAIN DEVICE STRUCTURE TO CONTROL ENCROACHMENT AND DELAMINATION OF SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 03/18/2010, and issued on 07/09/2013 with number US 8482084)

54. YOR920110222US1: SILICIDE MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME, M. Guillorn, E. Joseph, F. Liu, and Z. Zhang (filed in US on 06/20/2011, filed in PCT with a docket number of YOR920110222US1, and issued on 06/25/2013 with number US 8470628)

53. FIS920100142US1: METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE, C. Lavoie, A. Ozcan, B. Yang, and Z. Zhang(filed in US on 01/14/2011,and issued on 06/04/2013 with number US 8456011)

52. YOR920100265US1: SCHOTTKY FET FABRICATED WITH GATE LAST PROCESS, J. Cai, D. Guo, M. Khater, C. Lavoie and Z. Zhang (filed in US on 07/12/2010 and issued on 04/16/2013 with number US 8420469)

51. YOR920090456US1: USE EPITAXIAL NI SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 04/23/2010 and issued on 04/09/2013 with number US 8415748)

50. YOR920100069US1: SILICIDE CONTACT FORMATION, A. Kellock, C. Lavoie, A. Ozcan, S. Rossnagel, B. Yang, Y. Zhu, S. Zollner, and Z. Zhang (filed in US on 04/06/2010 and issued on 03/26/2013 with number US 8404589)

49. FIS920100106US1: SEMICONDUCTOR DEVICE WITH REDUCED JUNCTION LEAKAGE AND AN ASSOCIATED METHOD OF FORMING SUCH A SEMICONDUCTOR DEVICE, M. CAI, C. Lavoie, A. S. OZCAN, B.Yang, and Z. Zhang (filed in US on 10/26/2010 and issued on 01/08/2013 with number US 8349716)

48. YOR920100030US1: PREVENTION OF OXYGEN ABSORPTION INTO HIGH-K GATE DIELECTRIC OF SILICON-ON-INSULATOR BASED FINFET DEVICES, D. Guo, U. Kwon, C. Yeh, and Z. Zhang (filed in US on 03/04/2010 and issued on 10/09/2012 with number US 8283217)

47. FIS920100071US1: METHOD FOR FORMING A PROTECTION LAYER OVER SILICIDE CONTACT AND STRUCTURE FORMED THEREON, C. Lavoie, A. S. Ozcan, B. Yang, and Z. Zhang (filed in US on 08/03/2010 and issued on 10/04/2011 with number US8030154)

46. YOR920100428US1: METAL-SEMICONDUCTOR INTERMIXED REGIONS, C. Lavoie, T. Ning, A. Ozcan, B. Yang, and Z. Zhang (filed in US on 01/24/2011, and issued on 10/02/2012 with number US 8278200)

45. YOR920090454US1: METHOD FOR FORMING AN SOI SCHOTTKY SOURCE/DRAIN DEVICE TO CONTROL ENCROACHMENT AND DELAMINATION OF SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 03/18/2010 and issued on 05/01/2012 with number US8168503)

44. YOR920090502US1: SOURCE/DRAIN TECHNOLOGY FOR THE CARBON NANO-TUBE/GRAPHENE CMOS WITH A SINGLE SELF-ALIGNED METAL SILICIDE PROCESS, J. Chang, C. Lavoie, and Z. Zhang (filed in US on 04/19/2010 and issued on 08/14/2012 with number US 8242485)

43. YOR920100273US1: A METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR THE SILICIDAITION OF SUSPENDED SI STRUCTURES WITH EXTREMELY SMALL DIMENSION, B. Fletcher, C. Lavoie, S. Maurer, and Z. Zhang (filed in US on 02/07/2011, filed in PCT on 02/02/2012,and issued on 08/21/2012 with number US 8247319 )

42. 1830248-9: Suspended Si nanowire array based electronic ears for rapid drug susceptibility tests, Qitao Hu, Si Chen, Shili Zhang, Zhen Zhang, filed in Sweden on 08/27/2018

41. US 62/368,821: Devices, Systems and Methods for Use of Electrical Ion Sensors Based on Metal-Organic Supercontainers,  Nathan L. Netzer, Indrek Must, Yupu Qiao, Shi-Li Zhang, Zhenqiang Wang,  and Zhen Zhang, filed in US on 07/29/2016

40. YOR920150906US1: INTEGRATED CIRCUIT HAVING MIM CAPACITOR WITH REFRACTORY METAL SILICIDED STRAP AND METHOD TO FABRICATE SAME, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 02/16/2015)

39. YOR920130990US1: SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION, K. Cheng, R. H. Dennard; Z. Zhang (filed in US on 10/12/2015)

38. YOR920150345US1: Trigate Device with Full Silicided Epi-less Source/Drain for High Density Access Transistor Applications, M. A. Guillorn, F. Liu, and Z. Zhang (filed in US on 08/05/2015)

37. YOR920150170US1: HIGH DENSITY NANO-ARRAY FOR SENSING, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 05/28/2015)

36. YOR920150093US1: SELF-ALIGNED VERTICAL CNT ARRAY TRANSISTOR, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 03/27/2015)

35. YOR920110697US2: TECHNIQUES TO FORM UNIFORM AND STABLE SILICIDE, C. Lavoie, D. Lee, A. Ozcan, and Z. Zhang(filed in US on 01/28/2015)

34. YOR920140085US1: MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE INVERSION, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 10/27/2014)

33. YOR920130321US1: JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS, Q. Cao, Z. Li, F. Liu, and Z. Zhang (filed in US on 07/12/2013)

32. YOR920121020US1: REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR, with Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 06/04/2013)

31. YOR920130105US1: TECHNIQUES FOR FABRICATING JANUS SENSOR, with Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 05/02/2013)

30. YOR920130184US1: COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND GOLD NANOPARTICLE HYBRID, with Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 04/23/2013)

29. YOR820121027: DUAL SILICIDE PROCESS COMPATIBLE WITH A REPLACEMENT-METAL-GATE. E. Alptekin, S. Koswatta, C. Lavoie, A.S. Ozcan, K. T Schonenberg, P. M. Solomon and Z. Zhang (filed in US on 04/11/2012)

28. YOR920120680US1, FACETED SEMICONDUCTOR NANOWIRE, K. Cheng, J. Li, Y. Zhu and Z. Zhang (filed in US on 03/14/2013)

27. FIS920120290US1: CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION, Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 03/14/2013)

26. YOR920120946US1: A NOVEL DUAL SILICIDE PROCESS, C. Cabral, C. Lavoie, A. S. Ozcan and Z. Zhang (filed in US on 01/31/2013)

25. YOR920120842US1, REDUCING CONTACT RESISTANCE BY DIRECTED SELF-ASSEMBLING, Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 01/18/2013)

24. YOR920120287US1: SELF-ALIGNED SILICIDE BOTTOM PLATE FOR EDRAM APPLICATIONS BY SELF-DIFFUSING METAL IN CVD/ALD METAL PROCESS, Q. Cao, S. Fang, Z. Li, F. Liu and Z. Zhang (filed in US on 10/31/2012)

23. YOR920120606US1, USING FAST ANNEAL TO FORM UNIFORM NI(PT)SI(GE) CONTACTS ON SIGE LAYER, J. Newbury, K. Rodbell, Y. Zhu and Z. Zhang (filed in US on 8/24/2012)

22. FIS920120095US1: NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS, Q. Cao, Z. Li, F. Liu and Z. Zhang (filed in US on 06/27/2012)

21. YOR920110525US1: INTERFACE ENGINEERING TO OPTIMIZE METAL-III-V CONTACTS, C. Lavoie, U. Rana, K. Shiu, Y. Sun, D.K. Sadana, P. M. Solomon and Z. Zhang (filed in US on 02/08/2012)

20. YOR920110455US1: USE BAND-EDGE GATE METALS AS THE CONTACTS TO THE SOURCE AND DRAIN OF CMOS DEVICES, K. Choi, C. Lavoie, P.M. Solomon, B. Yang and Z. Zhang (Filed in US on 03/15/2012)

19. YOR920110697US1: STRUCTURE AND METHOD TO FORM UNIFORM AND STABLE SILICIDE, D. Lee, C. Lavoie, A. S. Ozcan and Z. Zhang (Filed in US on 02/08/2012)

18. YOR920100681US1: METHOD TO FABRICATE MULTICRYSTAL SOLAR CELL WITH LIGHT TRAPPING SURFACE USING NANOPORE COPOLYMER, D. Guo, Z. Li, K. Wang and Z. Zhang (filed in US on 11/04/2012)

17. YOR920090453US1: MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION, W. Haensch, C. Lavoie, Q. Ouyang, X. Shao, P.M. Solomon, B. Yang and Z. Zhang (filed in US on 11/29/2010),

16. YOR920100053US1: SCHOTTKY BARRIER SOLAR CELLS WITH HIGH AND LOW WORK FUNCTION METAL CONTACTS, J. Desouza, H. Hovel, D. Inns, J. Kim, C. Lavoie, C. Murray, D. Sadana, K. Saenger, G. Shahidi and Z. Zhang (filed in US on 05/09/2011)

15. YOR920100052US1: SOLAR CELL WITH INTERDIGITATED BACK CONTACTS FORMED FROM HIGH AND LOW WORK-FUNCTION-TUNED SILICIDES OF THE SAME METAL, J. Desouza, H. Hovel, D. Inns, J. Kim, C. Lavoie, D. Sadana, K. Saenger, and Z. Zhang (filed in US on 05/09/2011)

14. YOR920090600US1: A SCHOTTKY JUNCTION SI NANOWIRE/NANOBELT FIELD-EFFECT BIO-SENSOR/MOLECULE DETECTOR, D. Guo, C. Lavoie, Q. Ouyang, Y. Sun and Z. Zhang (filed in US on 06/29/2010)

13. YOR920100067US1, SCHOTTKY JUNCTION SOURCE/DRAIN FET FABRICATION USING SULFUR OR FLOURINE CO-IMPLANTATION, C. Lavoie, S. Maurer, Q. Ouyang, P. M. Solomon, and Z. Zhang (filed in US on 04/05/2010, Abandoned on 02/03/2012)

12. YOR920100068US1: FET WITH FUSI GATE AND REDUCED SOURCE/DRAIN CONTACT RESISTANCE, C. Lavoie, T. Ning, Q. Ouyang, P. M. Solomon and Z. Zhang (filed in US on 04/06/2010)

11. YOR920100069US1: SILICIDE CONTACT FORMATION, A. Kellock, C. Lavoie, A. Ozcan, S. Rossnagel, B. Yang, Y. Zhu, S. Zollner and Z. Zhang (filed in US on 04/06/2010)

10. YOR920110511US1: A METHOD TO FORM SILICIDE CONTACT IN TRENCHES, M. A. Guillorn, C. Lavoie, G. Shahidi, B. Yang, and Z. Zhang (filed in US on 01/23/2012)

9. YOR920100071US1: SCHOTTKY FET WITH ALL METAL GATE, D. Guo, M. Khater, C. Lavoie, Q. Ouyang and Z. Zhang (filed in US on 04/07/2010, Abandoned on 7/11/2012)

8. YOR920100398US1: INTERMIXED SILICIDE FOR REDUCTION OF EXTERNAL RESISTANCE IN INTEGRATED CIRCUIT DEVICES, C. Lavoie, A. Ozcan, B. Yang and Z. Zhang (filed in US on 11/05/2010)

7. YOR920100245US1: SILICON ON INSULATOR FIELD EFFECT DEVICE, D. Guo and Z. Zhang (filed in US on 08/16/2010)

6. FIS920100106US1: METHOD TO REDUCE JUNCTION LEAKAGE, M. Cai, C. Lavoie, A. Ozcan, B. Yang and Z. Zhang (filed in US on 10/26/2010)

5. YOR920100207US1: CONTACT RESISTIVITY REDUCTION BY DEEP LEVEL IMPURITIES, N. Tak and Z. Zhang (filed in US on 06/03/2010, filed in CN with a DOCKET number YOR920100207CN1 on 05/31/2011, and filed in KR with a DOCKET number YOR920100207KR1 on 05/16/2011),

4. YOR920100257US1: IMPLANTLESS DOPANT SEGREGATION PROCESS FOR SILICIDE CONTACTS, C. Cabral, J. Cotte, D. Koli, L. Kosbar, M. Krishnan, C. Lavoie, S. Rossnagel and Z. Zhang (filed in US on 07/09/2010)

3. YOR920100430US1: DEPOSITION ON A NANOWIRE USING ATOMIC LAYER DEPOSITION, D. Guo, Z. Li, K. Wang, Y. Zhu and Z. Zhang (filed in US on 01/25/2011)

2. YOR920100323US1: STABILIZED NICKEL SILICIDE INTERCONNECTS, C. Cabral, B. Fletcher, C. Lavoie and Z. Zhang (filed in US on 08/1/2011)

1. FIS920110076US1: SELF-ALIGNED BOTTOM PLATE FOR MHK MIM FOR EDRAM APPLICATIONS, P. Chudzik, D. Farmer, Z. Li, C. Pei, K. Wang, J. Yu and Z. Zhang (filed in US on 09/09/2011)