RF-LDMOS transistor for high power.
Main research activities focus on high-frequency Si device technologies, and more specifically on simulation and modelling of semiconductor devices, high power RF transistors, etc. In addition, dielectrics materials and metal gate technology for microelectronic applications, as well as semiconductor substrates for high temperature electronics are also subjects of study.
The group is a member of a number of networks of excellence involving all major groups in Europe; TARGET - RF power devices and SINANO - silicon nano devices.
Research leader: Jörgen Olsson